AB4C8_cF52_216_a_e_2e & a,x2,x3,x4 --params=9.7294,0.3974,0.6343,0.135 & F-43m T_{d}^{2} #216 (ae^3) & cF52 & None & GaMo4S8 & GaMo4S8 & H. {Ben Yaich} et al., J. Solid State Chem. 51, 212-217 (1984) 1.00000000000000 0.00000000000000 4.86470000000000 4.86470000000000 4.86470000000000 0.00000000000000 4.86470000000000 4.86470000000000 4.86470000000000 0.00000000000000 Ga Mo S 1 4 8 Direct 0.00000000000000 0.00000000000000 0.00000000000000 Ga (4a) 0.39740000000000 0.39740000000000 0.39740000000000 Mo (16e) 0.39740000000000 0.39740000000000 -1.19220000000000 Mo (16e) 0.39740000000000 -1.19220000000000 0.39740000000000 Mo (16e) -1.19220000000000 0.39740000000000 0.39740000000000 Mo (16e) 0.63430000000000 0.63430000000000 0.63430000000000 S (16e) 0.63430000000000 0.63430000000000 -1.90290000000000 S (16e) 0.63430000000000 -1.90290000000000 0.63430000000000 S (16e) -1.90290000000000 0.63430000000000 0.63430000000000 S (16e) 0.13500000000000 0.13500000000000 0.13500000000000 S (16e) 0.13500000000000 0.13500000000000 -0.40500000000000 S (16e) 0.13500000000000 -0.40500000000000 0.13500000000000 S (16e) -0.40500000000000 0.13500000000000 0.13500000000000 S (16e)